Journal
NATURE COMMUNICATIONS
Volume 13, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-022-33917-2
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Funding
- National Key R&D Program of China [2018YFA0703700, 2021YFA1200800]
- National Natural Science Foundation of China [91964203, 92164103]
- Beijing National Laboratory for Molecular Sciences [BNLMS202001]
- Fundamental Research Funds for the Central Universities [2042021kf0029]
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This study presents the synthesis of two-dimensional p-doped SnSe material using a physical vapor deposition approach, demonstrating the coexistence of room-temperature ferrimagnetism and ferroelectricity. This is significant for exploring the magnetoelectric coupling in the two-dimensional limit and constructing high-performance logic devices.
Two-dimensional multiferroic materials have garnered broad interests attributed to their magnetoelectric properties and multifunctional applications. Multiferroic heterostructures have been realized, nevertheless, the direct coupling between ferroelectric and ferromagnetic order in a single material still remains challenging, especially for two-dimensional materials. Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe2 microdomains and accompanying interfacial charge transfer results in the emergence of degenerate semiconductor and metallic feature in SnSe. Intriguingly, the room-temperature ferrimagnetism has been demonstrated in two-dimensional p-doped SnSewith the Curie temperature approaching to similar to 337 K. Meanwhile, the ferroelectricity is maintained even under the depolarizing field introduced by SnSe2. The coexistence of ferrimagnetism and ferroelectricity in two-dimensional p-doped SnSe verifies its multiferroic feature. This work presents a significant advance for exploring the magnetoelectric coupling in two-dimensional limit and constructing high-performance logic devices to extend Moore's law.
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