Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of >60% across a record wavelength span from lambda similar to 400 nm to > 640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 +/- 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.

Automated summary

Visible and near-infrared spectrum photonic integrated circuits are important technologies for addressing scaling challenges in quantum information and biosensing. This study reports the integration of silicon nitride-on-silicon waveguide photodetectors in a visible light photonic platform, which achieved high external quantum efficiency, wide opto-electronic bandwidth, and high avalanche gain-bandwidth product.