Journal
NATURE COMMUNICATIONS
Volume 13, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-022-33350-5
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Funding
- Japan Science and Technology Agency [18H03860, 18K14130, 20H05650, 21J21102, 21K14541, 22H04948]
- CREST of the Japan Science and Technology Agency [JPMJCR1777]
- PRESTO of the Japan Science and Technology Agency [JPMJPR19LB]
- Spintronics Research Network of Japan (Spin-RNJ)
- ANRI fellowship
- Nanotechnology Platform of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- Cryogenic Research Center of the University of Tokyo
- Japan Society for the Promotion of Science (JSPS) Fellowships for Young Scientists
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Researchers have achieved efficient spin-charge current conversion by using a two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and oxide insulating layers. The introduction of a strongly correlated perovskite oxide LaTiO3+delta (LTO) interlayer has enabled giant spin-to-charge current conversion efficiencies, highlighting the potential of oxide interfaces for spin-orbitronics applications.
The two-dimensional electron gas (2DEG) formed at interfaces between SrTiO3 (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored. Here, using a strongly correlated polar-metal LaTiO3+delta (LTO) interlayer and the 2DEG formed at the LTO/STO interface in an all-epitaxial heterostructure, we demonstrate giant spin-to-charge current conversion efficiencies, up to similar to 190 nm, using spin-pumping ferromagnetic-resonance voltage measurements. This value is the highest among those reported for all materials, including spin Hall systems. Our results suggest that the strong on-site Coulomb repulsion in LTO and the giant RSOI of LTO/STO may be the key to efficient spin-charge conversion with suppressed spin-flip scattering. Our findings highlight the hidden inherent possibilities of oxide interfaces for spin-orbitronics applications.
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