4.8 Article

Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly correlated metal interlayer

Journal

NATURE COMMUNICATIONS
Volume 13, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41467-022-33350-5

Keywords

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Funding

  1. Japan Science and Technology Agency [18H03860, 18K14130, 20H05650, 21J21102, 21K14541, 22H04948]
  2. CREST of the Japan Science and Technology Agency [JPMJCR1777]
  3. PRESTO of the Japan Science and Technology Agency [JPMJPR19LB]
  4. Spintronics Research Network of Japan (Spin-RNJ)
  5. ANRI fellowship
  6. Nanotechnology Platform of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
  7. Cryogenic Research Center of the University of Tokyo
  8. Japan Society for the Promotion of Science (JSPS) Fellowships for Young Scientists

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Researchers have achieved efficient spin-charge current conversion by using a two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and oxide insulating layers. The introduction of a strongly correlated perovskite oxide LaTiO3+delta (LTO) interlayer has enabled giant spin-to-charge current conversion efficiencies, highlighting the potential of oxide interfaces for spin-orbitronics applications.
The two-dimensional electron gas (2DEG) formed at interfaces between SrTiO3 (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored. Here, using a strongly correlated polar-metal LaTiO3+delta (LTO) interlayer and the 2DEG formed at the LTO/STO interface in an all-epitaxial heterostructure, we demonstrate giant spin-to-charge current conversion efficiencies, up to similar to 190 nm, using spin-pumping ferromagnetic-resonance voltage measurements. This value is the highest among those reported for all materials, including spin Hall systems. Our results suggest that the strong on-site Coulomb repulsion in LTO and the giant RSOI of LTO/STO may be the key to efficient spin-charge conversion with suppressed spin-flip scattering. Our findings highlight the hidden inherent possibilities of oxide interfaces for spin-orbitronics applications.

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