Boron doping of diamond-like carbon films by pulsed laser deposition technique for photovoltaic application

Diamond-like carbon (DLC) films were deposited by pulsed laser deposition technique using a glassy carbon disc as carbon source material. Boron doping in DLC films was carried out by ablating boron disc sequentially during the synthesis of DLC films. Field emission scanning electron microscopy, X-ray photoelectron spectroscopy (XPS) and Raman measurements were utilized to characterize the films. Hot-probe study indicated the films to be p - type. Core level XPS spectra of B1s appeared at - 189.5 eV and indicated that boron atoms are in form of B-C network connect. Raman studies indicated a dilatation of host lattice with the incorporation of boron in DLC matrix favouring graphitization. Band gap of the thin films decreased from-2.0 eV (pure DLC) to-1.76 eV with increased incorporation of boron. A photovoltaic cell structure (glass/indium tin oxide)/B:DLC/ZnO/Ag) conceived here, indicated an open circuit voltage-110 mV, short circuit current density-7.5 mA/cm2 with a fill factor-0.3, and a low conversion efficiency (eta) - 0.23%.

Automated summary

Diamond-like carbon (DLC) films were deposited using pulsed laser deposition technique with a glassy carbon disc as the carbon source. Boron doping in DLC films was achieved by ablating a boron disc during the synthesis process. The study found that boron doping significantly affected the structure and electrical properties of DLC films.