Tuning the Mn5Ge3 and Mn11Ge8 thin films phase formation on Ge(111) via growth process

We have studied the stability of manganese germanide thin films grown on Ge(111) substrates by three different growth methods: solid phase epitaxy, reactive deposition epitaxy and co-deposition. By combining X-ray diffraction and magnetic measurements, we demonstrate that we can form either Mn5Ge3 or Mn11Ge8 thin films depending on the growth processes. In the case of solid phase epitaxy, we explain the phase formation sequence by taking into consideration the kinetic and thermodynamic processes involved. Tuning phase formation of the manganese germanide thin films was determined using in situ X-ray diffraction and the effect of the thin film thickness on the Mn5Ge3 thermal stability was investigated.

Automated summary

This study investigated the stability of manganese germanide thin films grown on Ge(111) substrates using three different growth methods. It was found that different phases of thin films can be formed depending on the growth processes, and the phase formation sequence was explained by considering the kinetic and thermodynamic processes involved. In situ X-ray diffraction was used to determine the tuning phase formation of the manganese germanide thin films.