Non-vacuum room temperature-processed sintering method of molybdenum pattern by intense pulsed light irradiation for high-performance electronic devices

In this study, the molybdenum (Mo) pattern was realized via intense pulsed light (IPL) irradiation process under ambient condition, without vacuum deposition process. The screen printing method was applied to realize a certain pattern using conductive ink composed of Mo nanoparticles. This printed Mo pattern showed low electrical conductivity due to oxide film on the nanoparticles surface. To improve this drawback, the IPL irradiation process was optimized for sintering of Mo pattern, therefore the remarkable electrical conductivity (35 mu omega.cm) was observed after IPL irradiation process. To investigate the microstructure and other reaction effects of Mo pattern, the various analysis was conducted such as scanning electron microscope, X-ray diffraction, focused ion beam analysis. This printed Mo pattern was applied for the source and drain (S/D) electrode of indium gallium zinc oxide (IGZO) based thin film transistor (bottom gate; TFT). The interfacial microstructure between Mo pattern and IGZO layer was investigated by transmittance electron microscope analysis. Consequently, the TFT with IPL-sintered Mo (S/D) pattern showed a noteworthy saturation mobility of 13.5 cm(2).(V.s)(-1).

Automated summary

This study achieved the realization of molybdenum (Mo) patterns through intense pulsed light (IPL) irradiation process at room temperature, eliminating the need for vacuum deposition. By optimizing the IPL irradiation process, the low electrical conductivity resulting from oxide film on the surface of Mo nanoparticles was improved. The microstructure of the Mo pattern and its interface with the IGZO layer were investigated.