4.7 Article

Effect of buffer layer and substrate growth temperature on the microstructural evolution of hexagonal boron nitride thin films

Journal

SURFACE & COATINGS TECHNOLOGY
Volume 447, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2022.128805

Keywords

Hexagonal boron nitride; Thin films; Pulsed laser deposition

Funding

  1. National Science Foundation [1849206, 1920954]
  2. Office of Integrative Activities
  3. Office Of The Director [1920954] Funding Source: National Science Foundation

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This study explores the pulsed laser deposition technique for synthesizing hexagonal boron nitride (hBN) thin films and investigates the influence of deposition temperature and buffer layer on the microstructure, mechanical, and wetting properties of the films.
Hexagonal boron nitride (hBN) thin films have excellent optical, electrical, and corrosion resistance properties that can enable a wide range of applications. The current study explores pulsed laser deposition technique for synthesizing hBN thin films. The microstructure, mechanical, and wetting properties of hBN thin films were analyzed as a function of substrate growth temperature (25 degrees C, 300 degrees C, 500 degrees C, and 800 degrees C) and buffer layer addition (Cu or Ti). The microstructure of hBN thin films was found to be influenced by the deposition temperature. This study revealed that the layered growth (for samples deposited at 25 degrees C) and layer plus island growth (for samples deposited at >= 300 degrees C) to be the primary growth modes of the thin films regardless of the buffer layer. The roughness of hBN thin films with the Cu buffer layer, in general, increased with the increase in deposition temperature, whereas no significant differences in roughness were observed for films deposited on Si and Ti buffer layer. Grazing Incidence X-ray diffraction results showed the presence of hexagonal close packed crystal structure for all the deposited thin films. These results were corroborated with Raman spectroscopy. The hBN thin films exhibited the hardness and modulus values of -10-14 GPa and -120-180 GPa, respectively. No considerable differences in mechanical properties were observed for hBN thin films deposited at various temperatures except for the films deposited with the Cu buffer layer, which showed lower mechanical properties. The wettability of hBN thin films was analyzed using contact angle measurements. The wettability was found to be directly influenced by the surface roughness of hBN thin films. Characterization of hBN thin films indicates that the deposition temperature and buffer layer addition had an influence on the growth and microstructural evolution of hBN thin films.

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