RF simulation platform of qubit control using FDSOI technology for quantum computing

In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location.

Automated summary

In this study, we conducted simulations on an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation took into account the characteristics of the ESR line, such as geometry, configuration, stack, and material properties, as well as the electromagnetic environment surrounding the qubits, including gates and interconnect networks. By accurately assessing the magnetic and electric field distribution, we found that the EM environment significantly affects the efficiency of the ESR line for spin control, as characterized by the magnetic over electric field ratio generated at the qubit location.