Built-in potential and ground state switching in coupled InGaN/GaN quantum wires

Built-in potential and ground state switching in coupled In0.2Ga0.8N/GaN quantum wires (QWRs) is investigated as a function of barrier width between QWRs. In the case of a relatively thin barrier thickness, the ground state wave function of hole exists in the upper QWR region while that of electron exists in the lower QWR region because the lowest and the highest built-in potentials exist in the upper and the lower QWRs, respectively. However, the difference of bottom energies in the lower and upper QWRs is gradually decreased with increasing barrier width between QWRs. As a result, in the case of a relatively thick barrier thickness (L-b >= 40 for all), we observe that the ground state switching of hole and electron wavefunctions occurs.

Automated summary

The built-in potential and ground state switching in coupled In0.2Ga0.8N/GaN quantum wires (QWRs) are investigated in relation to the barrier width between QWRs. For a relatively thin barrier thickness, the ground state wave function of the hole is observed in the upper QWR region, while that of the electron is observed in the lower QWR region. However, as the barrier width between QWRs increases, the difference in bottom energies between the lower and upper QWRs decreases, resulting in a ground state switching of the hole and electron wave functions for relatively thick barrier thickness.