Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 406, Issue -, Pages 282-288Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2016.01.032
Keywords
Spin gapless completely compensated ferrimagnet (SG-CCF); Zr(2)MnZ (Z=Al, Ga, In); Electronic structure; Magnetic properties
Funding
- Romanian National Authority for Scientific Research
- MEN - UEFISCDI [275/2014]
- [POSDRU/159/1.5/S/137750]
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The crystal structure, electronic and magnetic properties of predicted new full-Heusler compounds Zr(2)MnZ (Z=Al, Ga, In) were studied within the density functional theory (DFT) framework. These materials exhibit unique properties that connect the spin gapless semiconducting character with the completely compensated ferrimagnetism. Magnetically ordered Zr(2)MnZ (Z=Al, Ga, In) compounds crystallize in inverse Heusler structure are stable against decomposition and have zero magnetic moment per formula unit, in agreement with Slater-Pauling rule. The Zr2MnAl compound presents semiconducting properties with an energy band gap of 0.41 eV in the majority spin channel and a zero band gap in the minority spin channel. By substituting completely the Al in Zr2MnAl via Ga and In elements, semiconducting pseudo band gaps are formed in the majority spin channels due to different neighborhoods around the manganese atoms, which decreases the energy of Mn triple degenerated anti-bonding states. (C) 2016 Elsevier B.V. All rights reserved.
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