Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Automated summary

This review comprehensively discusses the mechanisms, properties, stability, and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures. The correlation between properties and performance is explored in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. The existing challenges and future opportunities are also presented.