Journal
SMALL
Volume 18, Issue 44, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202204178
Keywords
aluminum; germanium; metal-semiconductor heterostructures; schottky barrier field-effect transistors; silicon
Categories
Funding
- Austrian Science Fund (FWF) [I5383-N, Y1238-N36]
- Austrian Science Fund (FWF) [I5383] Funding Source: Austrian Science Fund (FWF)
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This study reports on the systematic structural and electronic properties of Al-Si1-xGex heterostructures obtained through thermally induced exchange. The resulting junctions exhibit high structural quality with no intermetallic phases, and ultra-thin interfacial Si layers contribute to the morphologic stability. The findings provide a versatile platform with Si1-xGex composition-dependent properties, which can open up new device implementations for emerging nanoelectronic, optoelectronic, and quantum devices.
Si1-xGex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-xGex junctions that are vital for diverse emerging More than Moore and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si1-xGex heterostructures, obtained from a thermally induced exchange between ultra-thin Si1-xGex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si1-xGex segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si1-xGex into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si1-xGex composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si1-xGex junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.
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