Solar and infrared light sensing comparison of Yb/CIGS photodiode

Glass/Mo/CIGS/Yb Schottky photodiodes were fabricated by the physical vapor deposition method. The structural and morphological characterization of the CIGS layer on Mo was carried out. The current-voltage (I-V) characteristics were investigated in the dark, under solar light, and infrared. The diodes??? ideality factor and zero bias barrier height were calculated as 1.55 and 0.84 eV in the dark, respectively. When the time-dependent current plots are examined, it is seen that the rise and decay times are lower for solar light than infrared. As the intensity of solar light increases, the rise and decay times decrease. The responsivity value for 100 mW/cm2 solar light was found to be 8.5 mA/W and the detectivity value was 1.7 ?? 107 Jones. For infrared light, the same parameters were calculated as 3.4 mA/W and 7.1 ?? 106 Jones. Furthermore, capacitance-voltage and conductance-voltage characteristics were evaluated for different frequencies.

Automated summary

Glass/Mo/CIGS/Yb Schottky photodiodes were fabricated by the physical vapor deposition method. The structural and morphological characterization of the CIGS layer on Mo was carried out. The current-voltage (I-V) characteristics were studied in the dark, under solar light, and infrared. The study revealed that the diodes had an ideality factor of 1.55 and a zero bias barrier height of 0.84 eV in the dark. Moreover, the rise and decay times were shorter for solar light compared to infrared, and decreased as solar light intensity increased. The responsivity value for 100 mW/cm2 solar light was found to be 8.5 mA/W, while for infrared light it was 3.4 mA/W. Capacitance-voltage and conductance-voltage characteristics were also evaluated for different frequencies.