Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition

Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H-2 concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H-2 had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H-2 concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H-2 content influenced the graphene morphology and its quality. A low H-2 concentration (0% and 2.5%) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H-2 (20% and 50%) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface. (C) 2015 Elsevier Ltd. All rights reserved.