Journal
RADIATION EFFECTS AND DEFECTS IN SOLIDS
Volume 177, Issue 9-10, Pages 1088-1102Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/10420150.2022.2113076
Keywords
Ge single crystals; Sn implantation; pulsed e-beam treatments; RBS; cRBS study; TEM and DLTS measurements
Funding
- Helmholtz-Zentrum Dresden - Rossendorf e. V., a member of the Helmholtz Association
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This paper describes the recovery effects of pulsed electron beam treatment on Ge single crystals implanted with various doses of Sn ions at room and low temperatures. The results show that the Sn concentration can reach 1% and above with good substitutionality, and excellent lattice recovery is achieved after e-beam melting. Suggestions are given for further improvement of the pulsed e-beam technique.
The paper describes the recovery effects of pulsed electron beam treatment in Ge single crystals implanted with various doses of Sn ions at room and low temperatures. A protective coat of 100 nm Sn was applied as a sacrificial layer. The implanted layers were studied by RBS/cRBS (Rutherford BackScattering Spectrometry/channelled Rutherford BackScattering Spectrometry) method, SIMS (Secondary Ion Mass Spectrometry) and TEM (Transmission Electron Microscopy). Defects revealed in channelled RBS spectra were analysed by McChasy code. The results show that the Sn concentration attains 1% and more with very good substitutionality. They also reveal excellent lattice recovery after e-beam melting. Suggestions are derived as regards further improvement of pulsed e-beam technique.
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