Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices

Pronounced polarization anisotropy in semiconductor nanowires has been exploited to achieve polarization-sensitive devices operating across the electromagnetic spectrum, from the ultraviolet to the terahertz band. This contribution describes the physical origins of optical and electrical anisotropy in nanowires. Polarization anisotropy arising from dielectric contrast, and the behaviour of (nano)wire grid polarizers, are derived from first principles. This review discusses experimental observations of polarization-sensitive light-matter interactions in nanowires. It then describes how these phenomena are employed in devices that detect or modulate polarized ter-ahertz radiation on ultrafast timescales. Such novel terahertz device concepts are expected to find use in a wide variety of applications including high-speed terahertz-band communications and molecular fingerprinting.

Automated summary

This article discusses the physical origins and experimental observations of polarization anisotropy in semiconductor nanowires, and how these phenomena are utilized in devices for detecting and modulating terahertz radiation. These novel terahertz devices are expected to find applications in various fields, including high-speed terahertz communications and molecular fingerprinting.