4.3 Article

The Effect of Absorber Stoichiometry on the Stability of Widegap (Ag,Cu)(In,Ga)Se2 Solar Cells

Journal

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.202200104

Keywords

(Ag; Cu)(In; Ga)Se-2; Cu(In; Ga)Se-2; device stability; stoichiometry; widegap chalcopyrite; CIGS-based solar cells

Funding

  1. Swedish Energy Agency [48479-1]
  2. Swedish Research Council [2019-04793]
  3. Vinnova [2019-04793] Funding Source: Vinnova
  4. Swedish Research Council [2019-04793] Funding Source: Swedish Research Council

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The effect of composition on the stability of (Ag, Cu)(In, Ga)Se-2 solar cells with different stoichiometry values was assessed. It was found that the depletion width strongly depends on the stoichiometry value, and can be greatly varied through light-soaking and dry-heat treatments. The device performance, particularly the current output, shows a stoichiometry dependence and is significantly affected after each round of treatment.
(Ag,Cu)(In,Ga)Se-2 solar cells with bandgaps of approximate to 1.45 eV with a large spread in absorber stoichiometry are characterized with the intention of assessing the effect of composition on the stability of the devices. This material is observed to have a poor diffusion length, leading to very strong dependence upon the depletion region width for charge carrier collection. The depletion width is observed to depend strongly upon the stoichiometry value and shrinks significantly after an initial period of dark storage. It is also seen that the depletion width can be varied strongly through light-soaking and dry-heat treatments, with prolonged annealing leading to detrimental contraction and light soaking leading to expansion which increases current collection. The extent of depletion width variation in response to the treatments is also clearly linked to absorber stoichiometry. Consequently, the device performance, particularly the current output, exhibits a stoichiometry dependence and is considerably affected after each round of treatment. Possible causes of this behavior are discussed.

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