Investigating the Enhanced Photoresponse in MoS2/GaAs Heterojunction

Herein, the photoresponse properties of a heterojunction of MoS2/GaAs under ambient light conditions are reported. The heterojunctions formed by the chemically deposited MoS2 film on GaAs wafers exhibit an enhancement responsivity by two orders over that of the substrate. The specific detectivity of the system is also found to increase by six orders. The response of the photodetector at varying irradiances demonstrates a trend of saturation of photocurrent. A sensitivity of the order of 3 is obtained for the photoresistor fabricated of the heterojunction. The enhancement of the photoresponse and the responsivity is explained via the absorption of light and the morphology of the MoS2 films.

Automated summary

The photoresponse properties of a MoS2/GaAs heterojunction under ambient light conditions are reported. The heterojunctions formed by chemically deposited MoS2 film on GaAs wafers showed an enhancement in responsivity by two orders and an increase in specific detectivity by six orders.