4.6 Article

Improvement in photo-device properties of CuO thin films for opto-electronic applications: effects of (Ni, Co) co-doping

Journal

PHYSICA SCRIPTA
Volume 97, Issue 12, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac9868

Keywords

metal oxide; spray pyrolysis; Ni-Co co-doping; bandgap; photo sensing properties

Funding

  1. Deanship of Scientific Research at King Khalid University [R.G.P. 2/147/43]

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We investigated the co-doping effects of transition metal elements (Ni, Co) on the opto-electronic properties of CuO thin films. Our findings showed that co-doping significantly enhances the optical and electrical properties of the films.
We report co-doping effects of transition metal elements (Ni, Co) primarily on the opto-electronic properties of CuO thin films. CuO, CuO:Ni(1%), CuO:Co(1%) and CuO:Ni(1%):Co(1%) thin films were deposited via the spray pyrolysis route. Structural studies revealed the monoclinic CuO structure for all films. For all the films scanning electron microscope (SEM) images showed a crack-free and homogeneous surface. Photoluminescence (PL) spectra of all the films exhibited four emission peaks at 415, 451, 477, and 521 nm wavelengths. The optical bandgap (E (g)) values were around 2.12 eV, 2.18 eV, 2.05 eV and 1.84 eV for CuO, CuO:Ni(1%), CuO:Co(1%) and CuO:Ni(1%):Co(1%)thin films, respectively. CuO:Ni(1%):Co(1%) photo-device displayed a large responsivity (R) of 0.43 AW(-1), external quantum efficiency (EQE) of 100% and detectivity (D *) of 9.55 x 10(9) Jones. Hence, co-doping of transition metal elements would be one of the effective approaches for enhancing opto-electronic properties of metal oxide compounds.

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