4.6 Article

Impact of process-induced ellipticity on the RESET process of cylindrical phase change memory devices

Journal

PHYSICA SCRIPTA
Volume 97, Issue 12, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac9dcd

Keywords

elliptical cross-section; aspect ratio; process-induced variability; Phase change memory

Funding

  1. Department of Science and Technology, Science and Engineering Research Board [SERB/F/10454/2019-2020, CRG/2019/003146]
  2. Ministry of Human Resource Development (MHRD), Scheme for Transformational and Advanced Research in Sciences (STARS), Government of India [STARS/APR2019/NS/302/FS]
  3. IoE-CoE grant from IIT Madras

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The impact of aspect ratio variation in heater and active material on programming in cylindrical PCM devices was systematically investigated, revealing significant effects of aspect ratios on programming efficiency in scaled-down devices.
Phase change memory (PCM) is one of the promising candidates for the next-generation high-speed non-volatile memory which exhibits excellent scalability. The cylindrical-type PCM devices entering the nano-scale regime should show their tolerance to the variation in the manufacturing process. However, it is highly challenging to fabricate cylindrical-type nano-scale devices ideally with circular cross-sections. In general, the degree of variation in circular cross-section is dictated by a geometrical parameter called aspect ratio (AR). In this study, the impact of variation in AR of heater (AR(heater)) and active material, Ge2Sb2Te5 (AR(GST)) on the RESET programming of the mushroom-type cylindrical PCM device is systematically investigated by using 3D TCAD simulations. The simulation results reveal that the RESET current (I-RESET) of the reference device (100 nm heater diameter) consisting of elliptical cross-sections increases significantly to similar to 67% when AR(heater) = 2 and 1 <= AR(GST) <= 2, whereas for the scaled-down devices of 20 nm and 10 nm heater diameter with elliptical cross-sections, the I-RESET increases to similar to 35% and similar to 38% when AR(heater) = 2 and AR(GST) = 1, and further I-RESET increases to similar to 54% and similar to 63% when AR(heater) = 2 and AR(GST) = 2 leading to high-power RESET programming. In the case of the reference device, the AR(GST) did not play any significant role on I-RESET. However, in the scaled-down devices, both AR(heater) and AR(GST) significantly affect the I-RESET. Furthermore, the device employing a vertically-oriented elliptical heater and horizontally-oriented elliptical GST (where AR(heater) = 2 and AR(GST) = 0.5) shows the peculiar re-amorphization among all the cases considered in this study. Hence, the miniaturized cylindrical PCM devices comprising elliptical cross-sections due to process-induced variability require an accurate understanding of the programming characteristics for reliable modeling and simulations.

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