Journal
ORGANIC ELECTRONICS
Volume 109, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2022.106610
Keywords
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Funding
- Dongguan Innovative Research Team Program [2018607201002]
- Guangdong Provincial Training Program of Innovation and Entrepreneurship for Undergraduates [S202010561186]
- Natural Science Foundation of China [22005102]
- China Postdoctoral Science Foundation [2020M682696]
- Technology Program of Guangdong [2021A1515010258]
- Guangzhou Basic and Applied Basic Research Project [202102020712, 202102020789]
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This manuscript presents the design and synthesis of a new n-type semiconductor TPBT-OR by introducing alkoxythiophene into Y5. The experimental results demonstrate that TPBT-OR exhibits good spectral response performance in the near-infrared wavelength range.
Recently, organic photodetectors (OPDs) have occupied a crucial position in the photoelectric industry due to their low cost and convenient production. For its potential applications in near-infrared (NIR) wavelengths, NIR-OPDs with high responsivity and detectivity have attracted a lot of research interest. In this manuscript, we designed and synthesized a new n-type semiconductor, TPBT-OR, by introducing alkoxythiophene into Y5. TPBT-OR exhibits a small optical bandgap of 1.20 eV and red-shifted absorption peaks of 882 nm in film. Using P3HT as a donor and without much additional treatment in device, broad spectra response over 10(11) Jones (cm Hz(1/2) W-1) can be achieved in the wavelength of 320 nm-1000 nm with the maximum responsivity of 0.084 A W-1 and detectivity of 7.87 x 10(11) Jones at around 850 nm. Thus, the new TPBT-OR molecule is a promising non-fullerene acceptor in near-ultraviolet to near-infrared detection.
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