4.6 Article

Mid-infrared Nb4N3-based superconducting nanowire single photon detectors for wavelengths up to 10 μm

Journal

OPTICS EXPRESS
Volume 30, Issue 22, Pages 40044-40052

Publisher

Optica Publishing Group
DOI: 10.1364/OE.472378

Keywords

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Funding

  1. Key Scientific Instrument and Equipment Development Projects of the Chinese Academy of Sciences
  2. Shanghai Science and Technology Development Foundation
  3. Science and Technology Commission of Shanghai Municipality
  4. Youth Innovation Promotion Association of the Chinese Academy of Sciences
  5. National Natural Science Foundation of China
  6. [YQYZZY0005]
  7. [21YF1455500]
  8. [2019SHZDZX01]
  9. [2020241]
  10. [2021230]
  11. [61801462]
  12. [61827823]
  13. [61971408]

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Mid-infrared single-photon detection is an important technology, and superconducting nanowire single photon detectors based on gamma-Nb4N3 film are more sensitive to low energy photons and have high detection efficiency.
Mid-infrared (MIR) single-photon detection is emerging as an important technology for various applications. Superconducting nanowire single photon detectors (SNSPDs) fabricated with superconducting films with energy gaps of a few meV are natural broadband single-photon detectors. Recently, extending SNSPDs' operation wavelengths into the MIR region is highly attractive. gamma-Nb4N3 has a reduced N content and lower energy gap than the commonly used delta-NbN, making SNSPDs based on gamma-Nb4N3 film more sensitive to low energy photons. We report on a Nb4N3-SNSPD based on 62-nm wide nanowire, with an optical absorption enhancement design and an optimized device package for efficient ZBLAN fiber coupling and dark count filtering. The developed device has a unity intrinsic detection efficiency (IDE) in the 1.5-4 mu m wavelength region, and the device detection efficiency at 2.95 mu m was measured to be 32.5%, with an uncertainty of 12.7%. Furthermore, we reduced the device geometry, and measured 3-10 mu m photon response of a device based on 5-nm film and 42-nm nanowire, with an IDE of 95%, 81%, 40%, and 6% for 4.8, 6, 8, and 10 mu m, respectively.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

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