4.7 Article

High-performance dual-control tunable absorber with switching function and high sensitivity based on Dirac semi-metallic film and vanadium oxide

Journal

OPTICS AND LASER TECHNOLOGY
Volume 153, Issue -, Pages -

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2022.108245

Keywords

Dirac semimetal; Vanadium oxide; Tunable narrow-band absorber; Switching state; High refractive index sensing

Funding

  1. National Natural Science Foundation of China [11604311, 61705204, 21506257, 61805278, 61975171]
  2. State Key Laboratory of Transducer Technology of China [SKT2001]
  3. Scientific Research Fund of Si Chuan Provincial Science and Technology Department [2020YJ0137, 2020YFG0467]
  4. Undergraduate Innovation Fund Project Precision Funding by Southwest University of Science and Technology [JZ21-052, JZ21-057]
  5. Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi (STIP) [2021L485]
  6. Major Special Projects of Science and Technology in Fujian Province [2021HZ021027]
  7. National Defense Science and Technology Innovation Special Zone Project [19-163-21-TS-001-06701]
  8. School of Science of Southwest University of Science and Technology for the Innovation Fund Project [LX20210067]

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This study combines two tunable metamaterials, vanadium oxide (VO2) and Dirac semimetal thin films (DSF), to design a tunable multi-band narrowband absorber with on-off switching function. The absorber has three perfect absorption peaks with absorptivity greater than 97% when VO2 is in metallic state. By lowering the temperature, VO2 can be transformed into an insulating state, which greatly reduces the absorption rate of the absorber and realizes the change of the state of the absorber. By changing the Fermi level (EF) of the DSF, the resonant frequency of the absorber is tunable up to 0.444 THz while maintaining the absorption rate above 90%.
This study combines two tunable metamaterials, vanadium oxide (VO2) and Dirac semimetal thin films (DSF), to design a tunable multi-band narrowband absorber with on-off switching function. When VO2 is in metallic state, the absorber has three perfect absorption peaks with absorptivity greater than 97%. By lowering the temperature, VO2 can be transformed into an insulating state, which greatly reduces the absorption rate of the absorber and realizes the change of the state of the absorber. We have conducted more in-depth studies on the absorption mechanism and structural parameters of the absorber in the on state. By changing the Fermi level (EF) of the DSF, the resonant frequency of the absorber is tunable up to 0.444 THz while maintaining the absorption rate above 90%. The absorber can maintain a stable working state in various complex electromagnetic environments, and has a refractive index sensitivity (S) of up to 462 GHz/RIU. Due to the advantages of various control methods, good performance and diverse functions, our designed absorber has good practical development prospects and market value in many fields such as switching and detection.

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