Impact of nonlinear electron transport model on character of light propagation in photorefractive semiconductors

The paper presents an analysis of nonlinear light propagation in photorefractive gallium arsenide. Two methods of nonlinear electron transport modelling have been distinguished, differentiated by the curve representing the dependence of electron drift velocity on the electric field. It has been shown that the phenomena of self-trapping of optical beams and the effect of bending of beam trajectories are possible both within the model for which the electron drift curve does not pass a local minimum, as in the case when the existence of a local minimum is taken into account. Since the model without a local minimum allows the excitation of charge carrier domains oscillations, the impact of this phenomenon on light propagation has been analysed. It has been shown that the oscillations have a limiting effect on the time window in which effective self-trapping of light occurs, and that they can manifest themselves in the form of oscillations in the intensity of the optical beam.

Automated summary

The paper analyzes the propagation of nonlinear light in photorefractive gallium arsenide and presents two methods of nonlinear electron transport modeling. The study shows that self-trapping of optical beams and bending of beam trajectories are possible in different models. The impact of oscillations in charge carrier domains on light propagation is also examined.