Fabrication of high sensitivity and fast response IR photodetector based on VO2 nanocrystalline thin films prepared on the silicon substrate

On Si substrates, vanadium dioxide nanocrystalline thin films (VO2 NC-TH) were prepared using the radio frequency magnetron sputtering (RF) method. The very small particles reference film was a very thin surface that appeared smooth like a coated Si wafer with the same spherical particle prominent and irregularly distributed in a thin film, according to XRD patterns with narrow peaks intensity and field emission scanning electron microscopy (FESEM) images. The current-voltage characteristic of metal-semiconductor-metal (M-S-M) VO2 NC-TH infrared photodetectors (IR-PD) in the dark and irradiated with 850 nm light and intensity was (0.17) mW/cm2. IR-PD exhibits 603, 3567, 10081, and 17751 sensitivity at 2, 3, 4, and 5 bise voltage, with increasing bias voltage increasing quantum efficiency, responsivity, and detectivity. The responsitivity and detectivity under 2, 3, 4, and 5 V bias are (0.24, 1.58, 7.92, and 14.76) A/W and (0.176, 1.03, 3.81 and 6.98) x 1012 Jones, respectively.

Automated summary

Vanadium dioxide nanocrystalline thin films were fabricated on Si substrates using RF magnetron sputtering method, showing good surface quality and particle distribution. The infrared photodetectors based on these films exhibited high sensitivity, responsivity, and detectivity at different bias voltages.