A spin qubit hiding from the noise

Article Nanoscience & Nanotechnology

A single hole spin with enhanced coherence in natural silicon

N. Piot et al.

Summary: This article reports a spin-orbit hole spin qubit, which achieves operation sweet spots by varying the magnetic field direction, reducing charge noise and extending Hahn-echo coherence time, providing new possibilities for the scalability of silicon-based hole spin qubits in quantum information processing.

NATURE NANOTECHNOLOGY (2022)

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Article Materials Science, Multidisciplinary

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

S. D. Liles et al.

Summary: The study investigates the hole-spin physics of the first hole in a silicon metal-oxide-semiconductor (MOS) quantum dot, revealing variations in the HH-LH splitting induced by nonuniform strain and a mechanism for electric modulation of the hole g tensor using local electric fields. The results demonstrate tuning of the hole g factor by up to 500% and identify a potential sweet spot to suppress spin decoherence caused by electrical noise, paving the way for optimizing spin-based devices through engineering of nonuniform strains.

PHYSICAL REVIEW B (2021)

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Article Quantum Science & Technology

Hole Spin Qubits in Si FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise

Stefano Bosco et al.

Summary: Hole Si fin field-effect transistors (FinFETs) are shown to be highly compatible with modern CMOS technology and have operational sweet spots where charge noise is completely removed. The presence of these sweet spots is a result of the interplay between material anisotropy and the shape of the FinFET cross section. Designs that maximize qubit performance and potentially pave the way towards a scalable spin-based quantum computer are identified.

PRX QUANTUM (2021)

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Article Physics, Multidisciplinary