Journal
NATURE
Volume 609, Issue 7927, Pages 496-+Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41586-022-05042-z
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Funding
- National Key R&D Programme of China [2021YFA1400803, 2017YFA0303703]
- National Natural Science Foundation of China (NSFC) [91950206, 92163216, 11874213, 51725203, U1932115, 51721001, 62005164]
- Science and Technology Commission of Shanghai Municipality [21DZ1100500]
- Shanghai Municipal Science and Technology Major Project
- Shanghai Frontiers Science Centre Programme [2021-2025, 20]
- Zhangjiang National Innovation Demonstration Zone [ZJ2019-ZD-005]
- Shanghai Rising-Star Program [20QA1404100]
- National Key Scientific Instrument and Equipment Development Project [61927814]
- Fundamental Research Funds for the Central Universities [021314380191]
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Lithium niobate (LiNbO3) is a promising material for reconfigurable three-dimensional ferroelectric domain engineering, and recent breakthroughs in nanophotonics have advanced the development of high-speed electro-optic modulators, frequency combs, and broadband spectrometers. A non-reciprocal near-infrared laser-writing technique is demonstrated for nanoscale domain engineering in LiNbO3, providing a pathway for controllable domain engineering in transparent ferroelectric crystals.
Lithium niobate (LiNbO3) is viewed as a promising material for optical communications and quantum photonic chips(1,2). Recent breakthroughs in LiNbO3 nanophotonics have considerably boosted the development of high-speed electro-optic modulators(3-5), frequency combs(6,7) and broadband spectrometers(8). However, the traditional method of electrical poling for ferroelectric domain engineering in optic(9-13), acoustic(14-17) and electronic applications(18,19) is limited to two-dimensional space and micrometre-scale resolution. Here we demonstrate a non-reciprocal near-infrared laser-writing technique for reconfigurable three-dimensional ferroelectric domain engineering in LiNbO3 with nanoscale resolution. The proposed method is based on a laser-induced electric field that can either write or erase domain structures in the crystal, depending on the laser-writing direction. This approach offers a pathway for controllable nanoscale domain engineering in LiNbO3 and other transparent ferroelectric crystals, which has potential applications in high-efficiency frequency mixing(20,21), high-frequency acoustic resonators(14-17) and high-capacity non-volatile ferroelectric memory(19,22).
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