Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures

The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling width between the channel and drain can be tuned by the gate voltage, so that the device exhibits ambipolar switching with two minima in the subthreshold swing slope. 34 and 29 mV decade(-1) subthreshold swings can be achieved and the on/off ratios are over 10(6) and 10(8) for the different switching mechanisms. The device provides a solution and guidance for the future design of low-power, high-performance devices.

Automated summary

The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure have been investigated. The gate voltage can tune the Schottky barrier height and tunneling width, resulting in ambipolar switching with two minima in the subthreshold swing slope. The device provides a solution and guidance for the future design of low-power, high-performance devices.