Journal
NANO LETTERS
Volume -, Issue -, Pages -Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c03034
Keywords
quan t u m device; carbon nanotube; double-quan t u m dot; charge fluctuators
Categories
Funding
- ERC [101023289]
- MICINN [2017SGR1664]
- U.S. DOE, Office of Basic Energy Sciences [CEX2019-000910-S]
- European Unions Horizon 2020 research and innovation programme under the Marie Sklodowska Curie grant [PCI2022-132951]
- AGAUR
- Quantera grant
- Fondo Europeo de Desarrollo
- Spanish Ministry of Economy and Competitiveness
- European Union- NextGenerationEU
- Fundacio Cellex
- Fundacio Mir-Puig
- Generalitat de Catalunya through CERCA
- [692876]
- [847517]
- [RTI2018-097953 -B-I00]
- [DE-AC02- 06CH11357]
- Marie Curie Actions (MSCA) [101023289] Funding Source: Marie Curie Actions (MSCA)
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Researchers have developed a reliable process to fabricate multielectrode circuits that can withstand harsh conditions of nanotube growth. High-quality charge stability diagrams of double and triple quantum dots have been measured, and long-range tunneling of electrons between the quantum dots has been observed. This work paves the way for the realization of a new generation of condensed-matter devices in an ultraclean environment.
Addressable quantum states well isolated from the environment are of considerable interest for quantum information science and technology. Carbon nanotubes are an appealing system, since a perfect crystal can be grown without any missing atoms and its cylindrical structure prevents ill-defined atomic arrangement at the surface. Here, we develop a reliable process to fabricate compact multielectrode circuits that can sustain the harsh conditions of the nanotube growth. Nanotubes are suspended over multiple gate electrodes, which are themselves structured over narrow dielectric ridges to reduce the effect of the charge fluctuators of the substrate. We measure high-quality double-and triple-quantum dot charge stability diagrams. Transport measurements through the triple-quantum dot indicate long-range tunneling of single electrons between the left and right quantum dots. This work paves the way to the realization of a new generation of condensed-matter devices in an ultraclean environment, including spin qubits, mechanical qubits, and quantum simulators.
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