Journal
NANO LETTERS
Volume -, Issue -, Pages -Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c02136
Keywords
transition-metal dichalcogenides; contact resistance; Schottky barrier; vacancy defects; memristor
Categories
Funding
- National Key R&D Program of China [2018YFA0703700, 2021YFA1201500]
- National Natural Science Foundation of China [91964203, 61974036]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB44000000]
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
- Youth Innovation Promotion Association CAS
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By constructing vertical metal-semiconductor-metal structures and setting them into a low-resistance state, we successfully reduce the contact resistance of two-dimensional semiconductors and improve their current density. This strategy is applicable to various two-dimensional semiconductors and contact metals, demonstrating good stability and wide application potential.
Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices exhibit high electrical contact resistances, restricting their practical applications. Here, we report a general contact-resistance-lowering strategy by constructing vertical metal-semiconductor-metal memristor structures at the contact regions and setting them into a nonvolatile low-resistance state through a memristive forming process. Through this, we reduce the contact resistances of MoS2 field-effect transistors (FETs) by at least one order of magnitude and improve the on-state current densities of MoTe2 FETs by about two orders of magnitude. We also demonstrate that this strategy is applicable to other two-dimensional semi-conductors, including MoSe2, WS2, and WSe2, and a variety of contact metals, including Au, Cu, Ni, and Pd. The good stability and universality indicate the great potential for technological applications.
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