Journal
NANO LETTERS
Volume 22, Issue 20, Pages 8130-8136Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c02571
Keywords
magnetic proximity effect; topological insulator; 2D ferromagnetic insulators; van der Waals heterostructures; anomalous Hall effect
Categories
Funding
- National Science Foundation Emerging Frontiers & Multidisciplinary Activities (EFMA) [1641101]
- U.S. Department of Energy (DOE) Office of Science through the Quantum Science Center (QSC, a National Quantum Information Science Research Center)
- JSPS KAKENHI [17K14329, 18H04471, 18H04304, 18F18328, 18H03858]
- CREST, JST
- Iwatani Naoji Foundation
- AIMR
- World Premier International Research Center Initiative (WPI) from MEXT
- International Research Fellowship of Japan Society for the Promotion of Science [Postdoctoral Fellowships for Research in Japan (Standard)]
- National Natural Science Foundation of China [12174027]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1641101] Funding Source: National Science Foundation
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The study demonstrates that magnetism can be introduced into topological insulators by using the magnetic proximity effect with van der Waals materials. The anomalous Hall effect was observed in these heterostructures, and the effect can be modulated by controlling the carrier density with electrostatic gating.
The search of novel topological states, such as the quantum anomalous Hall insulator and chiral Majorana fermions, has motivated different schemes to introduce magnetism into topological insulators. A promising scheme is using the magnetic proximity effect (MPE), where a ferromagnetic insulator magnet-izes the topological insulator. Most of these heterostructures are synthesized by growth techniques which prevent mixing many of the available ferromagnetic and topological insulators due to difference in growth conditions. Here, we demonstrate that MPE can be obtained in heterostructures stacked via the dry transfer of flakes of van der Waals ferromagnetic and topological insulators (Cr2Ge2Te6/BiSbTeSe2), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by MPE.
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