Journal
NANO LETTERS
Volume 22, Issue 19, Pages 7841-7847Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c02501
Keywords
2D metals; monolayer Ag; electronic structure; ultrafast photoemission spectroscopy; ARPES
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Funding
- National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC [DMR-1720595]
- NSF [DMR-1808751]
- Welch Foundation [F-1672]
- Penn State Center for Nanoscale Science (NSF) [DMR-2011839]
- Penn State 2DCC-MIP (NSF) [DMR-1539916]
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Recent research has shown that monolayer Ag confined between bilayer graphene and SiC is a large band gap two-dimensional semiconductor. This conclusion was revealed through the use of time-resolved and angle-resolved photoemission spectroscopy.
2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (>1 eV) 2D semiconductor, consistent with ab initio GW calculations. The measured valence band dispersion matches the GW quasiparticle band structure. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m(0). Possible mechanisms for this large enhancement in the apparent mass are discussed.
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