Facet Engineering for Amplified Spontaneous Emission in Metal Halide Perovskite Nanocrystals

Auger recombination and thermalization time are detrimental in reducing the gain threshold of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic devices. Here, we report the design strategy of facet engineering to reduce the gain threshold of amplified spontaneous emission by manyfold in NCs of the same concentration and edge length. We achieved this hallmark result by controlling the Auger recombination rates dominated by processes involving NC volume and thermalization time to the emitting states by optimizing the number of facets from 6 (cube) to 12 (rhombic dodecahedron) and 26 (rhombicuboctahedrons) in CsPbBr3 NCs. For instance, we demonstrate a 2-fold reduction in Auger recombination rates and thermalization time with increased number of facets. The gain threshold can be further reduced similar to 50% by decreasing the sample temperature to 4 K. Our systematic studies offer a new method to reduce the gain threshold that ultimately forms the basis of nanolasers.

Automated summary

This study reports the design strategy of facet engineering to reduce the gain threshold of semiconductor nanocrystal lasers. By controlling the Auger recombination rates and thermalization time through the number of facets, the gain threshold can be significantly reduced. Decreasing the sample temperature further reduces the gain threshold.