Related references
Note: Only part of the references are listed.Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides
Gautam Gaddemane et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2021)
High Current Density in Monolayer MoS2 Doped by AlOx
Connor J. McClellan et al.
ACS NANO (2021)
Carrier mobility tuning of MoS2 by strain engineering in CVD growth process
Yongfeng Chen et al.
NANO RESEARCH (2021)
Transistors based on two-dimensional materials for future integrated circuits
Saptarshi Das et al.
NATURE ELECTRONICS (2021)
Strain engineering 2D MoS2 with thin film stress capping layers
Tara Pena et al.
2D MATERIALS (2021)
Strain-engineering the Schottky barrier and electrical transport on MoS2
Ashby Phillip John et al.
NANOTECHNOLOGY (2020)
Modulation of carrier lifetime in MoS2monolayer by uniaxial strain*
Hao Hong et al.
CHINESE PHYSICS B (2020)
Uncovering the Effects of Metal Contacts on Monolayer MoS2
Kirstin Schauble et al.
ACS NANO (2020)
Piezoresistive strain sensor based on monolayer molybdenum disulfide continuous film deposited by chemical vapor deposition
Minjie Zhu et al.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING (2019)
Monolayer MoS2 Strained to 1.3% With a Microelectromechanical System
Jason W. Christopher et al.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS (2019)
Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2
Huanyao Cun et al.
NANO RESEARCH (2019)
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
Sam Vaziri et al.
SCIENCE ADVANCES (2019)
Vanadium-doped molybdenum disulfide film-based strain sensors with high gauge factor
Minjie Zhu et al.
APPLIED PHYSICS EXPRESS (2019)
Ultrasensitive Flexible Strain Sensor based on Two-Dimensional InSe for Human Motion Surveillance
Li Chen et al.
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)
Syntheses and bandgap alterations of MoS2 induced by stresses in graphene-platinum substrates
Wen Wan et al.
CARBON (2018)
Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films
Stefan Wagner et al.
NANO LETTERS (2018)
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1-&ITx&ITW&ITx&ITTe2
Ozgur Burak Aslan et al.
NANO LETTERS (2018)
Strain tuning of excitons in monolayer WSe2
Ozgur Burak Aslan et al.
PHYSICAL REVIEW B (2018)
Epitaxial Growth of Monolayer MoS2 on SrTiO3 Single Crystal Substrates for Applications in Nanoelectronics
Peiyu Chen et al.
ACS APPLIED NANO MATERIALS (2018)
Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors
Yuda Zhao et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
Kirby K. H. Smithe et al.
2D MATERIALS (2017)
Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
Zuocheng Zhang et al.
NANO LETTERS (2017)
Electron transport in some transition metal di-chalcogenides: MoS2 and WS2
D. K. Ferry
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
Strain-engineered growth of two-dimensional materials
Geun Ho Ahn et al.
NATURE COMMUNICATIONS (2017)
Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
Yu Chai et al.
SCIENTIFIC REPORTS (2017)
Substrate-induced strain and charge doping in CVD-grown monolayer MoS2
Woo Hyun Chae et al.
APPLIED PHYSICS LETTERS (2017)
Low Variability in Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe et al.
ACS NANO (2017)
Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
Jorge Quereda et al.
2D MATERIALS (2017)
Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Zhihao Yu et al.
ADVANCED MATERIALS (2016)
Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors
Tingting Shen et al.
ACS NANO (2016)
MoS2-Based Tactile Sensor for Electronic Skin Applications
Minhoon Park et al.
ADVANCED MATERIALS (2016)
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Gioele Mirabelli et al.
JOURNAL OF APPLIED PHYSICS (2016)
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English et al.
NANO LETTERS (2016)
Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy
Heather M. Hill et al.
NANO LETTERS (2016)
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se)
Manouchehr Hosseini et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Strain induced mobility modulation in single-layer MoS2
Manouchehr Hosseini et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
Sajedeh Manzeli et al.
NANO LETTERS (2015)
Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel
Naoki Harada et al.
JOURNAL OF APPLIED PHYSICS (2014)
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang et al.
NANO LETTERS (2014)
Group theory analysis of phonons in two-dimensional transition metal dichalcogenides
J. Ribeiro-Soares et al.
PHYSICAL REVIEW B (2014)
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
Zhenghe Jin et al.
PHYSICAL REVIEW B (2014)
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Wenjuan Zhu et al.
NATURE COMMUNICATIONS (2014)
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Zhihao Yu et al.
NATURE COMMUNICATIONS (2014)
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
Hsiao-Yu Chang et al.
ACS NANO (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
Hiram J. Conley et al.
NANO LETTERS (2013)
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
Keliang He et al.
NANO LETTERS (2013)
Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
Hongliang Shi et al.
PHYSICAL REVIEW B (2013)
Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2
C. Rice et al.
PHYSICAL REVIEW B (2013)
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
C. R. Zhu et al.
PHYSICAL REVIEW B (2013)
Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
M. Ghorbani-Asl et al.
PHYSICAL REVIEW B (2013)
Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain
Chung-Huai Chang et al.
PHYSICAL REVIEW B (2013)
Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains
Priya Johari et al.
ACS NANO (2012)
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-M X2 semiconductors (M = Mo, W; X = S, Se, Te)
Won Seok Yun et al.
PHYSICAL REVIEW B (2012)
Mechanical and electronic properties of monolayer MoS2 under elastic strain
Qu Yue et al.
PHYSICS LETTERS A (2012)
Stretching and Breaking of Ultrathin MoS2
Simone Bertolazzi et al.
ACS NANO (2011)
Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates
Sang Min Won et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Thin Polysilicon Gauge for Strain Measurement of Structural Elements
Yongdae Kim et al.
IEEE SENSORS JOURNAL (2010)
Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample orientation
T. M. G. Mohiuddin et al.
PHYSICAL REVIEW B (2009)
Mobility enhancement
N Mohta et al.
IEEE CIRCUITS & DEVICES (2005)
A logic nanotechnology featuring strained-silicon
SE Thompson et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs
JS Lim et al.
IEEE ELECTRON DEVICE LETTERS (2004)