Journal
MICROELECTRONICS RELIABILITY
Volume 138, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2022.114700
Keywords
Power electronic device; Silicon carbide; Thermal mapping; Automotive; Reliability
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Nowadays, there is a growing demand for high-efficiency power devices in automotive frameworks, which has driven the scientific community to develop new technologies that can operate under intense power loads. SiC-based substrates are seen as a promising solution in this broad scenario. This study focuses on the high-speed thermal characterization of a power module (ACEPACK DRIVE) designed by STMicroelectronics, aiming to provide a map of the temperature values reached at the surface under current-pulse stresses. Thermal images collected on one leg show a symmetrical temperature distribution, with a maximum temperature of around 60 degrees Celsius on the device metals, ensuring that any reliability issues due to thermomechanical stress are avoided.
Nowadays the increasing demand of high-efficiency power devices for automotive framework, forced the sci-entific community to develop new technologies capable to operate under intense power loads. Among the broad scenario SiC-based substrates represent a promising solution. This study focuses on a high-speed thermal char-acterization of a power module designed by STMicroelectronics (ACEPACK DRIVE) with the aim to provide a map of the temperature values reached at the surface upon current-pulse stresses. Thermal images collected on one leg show a symmetrical temperature distribution, with a maximum of around 60 degrees C on the device metals and ensures that any reliability issues due to the thermo-mechanical stress are avoided.
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