Dramatically enhanced ambient effects in a multi-layer MoS2 transistor with channel thickness near maximum depletion width

It is known that semiconducting two-dimensional transition metal dichalcogenides such as MoS2 and WSe2, widely attracted as advanced field-effect transistors (FETs) due to good surface roughness in nano-scale and outstanding gate control with the desired bandgap, are significantly affected by oxygen and water molecules in air. Here, the channel thickness-dependent ambient effects on operation of multi-layer MoS2 FETs are investi-gated for the first time. In particular, a multi-layer MoS2 FET with channel thickness similar to the maximum depletion width (D-max) exhibited dramatic changes in the on-current to off-current (I-on/I-off) ratio under ambient conditions. The results were verified using numerical simulations. Our work is important in terms of the development and optimization of highly sensitive chemical or gas sensors, and it furthers our understanding of how multi-layer MoS2 FETs operate.

Automated summary

This study investigates the ambient effects on multi-layer MoS2 FETs for the first time and finds that the channel thickness has a significant impact on their performance. This is important for the development and optimization of highly sensitive chemical or gas sensors, as well as for a better understanding of the operation of multi-layer MoS2 FETs.