Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures

Si implantation with a dose of 2x10(15) cm(-2) into GaN was performed at temperatures from 25 to 300?, followed by annealing at 1200? for 5 min. High resolution X-ray diffraction was used to monitor the implantation induced lattice strain after implantation and after annealing. The sheet concentrations and mobilities of electrons after activation annealing were measured by Hall measurement. Results show the effect of increasing implantation temperature on electrical activation of Si impurities in GaN is minor. Still, the lattice strain decreases with implantation temperature. The average electron concentration increases with implantation temperature from RT (6.26 +/- 0.76x10(19) cm(-3)) to 250? (8.06 +/- 0.98x10(19) cm(-3)) and begins to show a trend of decrease as it increases to 300?. The average electron mobility decreases with implantation temperature from RT (102.0 +/- 2.5 cm(2) V-1 center dot s(-1))to 250? (89.2 +/- 2.2 cm(2) V-1 center dot s(-1))and begins to show a trend of increase as it increases to 300?. The defects nature at elevated implantation temperatures and their correlation with electrical activation and scattering mechanism of carriers need further investigation.

Automated summary

Experimental results showed that increasing the implantation temperature had minor influence on the electrical activation of Si impurities in GaN, but led to a decrease in lattice strain. The average electron concentration and mobility remained relatively stable within a certain temperature range.