Free-standing nanowire layer-transfer parametric optimisation of multi-response process by Grey Taguchi design

Silicon nanowires (SiNWs) possess advantages over bulk silicon, such as higher surface-to-volume ratio and light trapping capability. The metal-assisted chemical etching fabricates SiNWs, and anodisation-electropolishing lifts off a free-standing film of the vertically aligned nanowires. The paper shows the reusability of the substrate for cost-effectiveness with a minute change in the surface roughness. Owing to multiple controlling and output parameters involved during fabrication, optimising process parameters for a specific application by the factorial method is expensive and tedious. Pure Taguchi design struggles with a multi-response system, whereas the Grey relational analysis converts the multi-response system to a single-response system by assigning grades. The Grey Taguchi design optimises the fabrication parameters for the optimum outcome, which is validated by experimentation.

Automated summary

Silicon nanowires have higher surface-to-volume ratio and light capturing capability compared to bulk silicon, fabricated through metal-assisted chemical etching and anodisation-electropolishing to create a free-standing film. To optimize fabrication parameters for specific applications, Grey relational analysis is more effective than traditional Taguchi design in converting a multi-response system to a single-response system.