4.7 Article

Effect of indium on microstructure, mechanical properties, phase stability and atomic diffusion of Sn-0.7Cu solder: Experiments and first-principles calculations

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.msea.2022.143938

Keywords

Sn-0.7Cu solder; Microstructure; Mechanical properties; Atomic migration barrier; First -principles calculations

Funding

  1. Rare and Precious Metal Materials Genome Engineering Project of Yunnan Province [202002AB080001]
  2. Yunnan Ten Thousand Talents Plan Young & Elite Talents Project [YNWR-QNBJ-2018-044]
  3. Innovation Team Cultivation Project of Yunnan Province [202005AE160016]
  4. Key Research & Development Program of Yunnan Province [202103AA080017]

Ask authors/readers for more resources

The effects of In addition on the properties of Sn-0.7Cu solder were investigated. It was found that In addition increased the lattice constants and melting range, decreased the melting point, increased the ultimate tensile strength, and decreased the elongation. In addition also increased the stability of the Cu(6)Sn(5) phase and decreased the growth rate of Cu6Sn5.
Sn-0.7Cu-In ternary alloy solders have received much attention because of their excellent weld stability and wettability. However, how to inhibit or slow down the formation of defects at the welding interface has always been the focus of research. The effects of In on melting point and microstructure of Sn-0.7Cu solders and phase stability and growth rate of intermetallic compounds (IMCs) in the solders were investigated by means of experiments and first-principles calculations. The Rietveld refinement results showed that the lattice constants of beta-Sn and eta'-Cu6Sn5 (Cu6Sn5) phases increase after In addition. Moreover, In can decrease the melting point, but increase the melting range of Sn-0.7Cu solders. After adding In, the ultimate tensile strength (UTS) increases, while the elongation decreases. From the first-principles calculation results, the stability of Cu(6)Sn(5 )increases after In doping, and In doping results in the formation of new chemical bonds between In atom and the neighboring Cu and Sn atoms. Ultimately, the diffusion activation energy and atomic migration barrier of the Cu atom increase after In doping, which in turn decreases the growth rate of Cu6Sn5.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available