Structure and luminescence properties of Bi3+-doped ZrSiO4 phosphors for near-UV excited white LEDs

ZrSiO4:Bi3+ phosphors were synthesized by conventional high-temperature solid-phase method. The structural and optical behaviors were investigated by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and photoluminescence spectra. Bi2O3 contributes to the ZrSiO4 phase generation from liquid phase sintering. The ZrSiO4:Bi3+ shows a broad emission band centered at 548 nm when excited at 361 nm. The Bi3+ doping concentration is optimized to be 4 mol%, and the luminescence intensity of ZrSiO4:0.04Bi3+ at 150 degrees C keeps 84% of that at room temperature. The results indicate that the ZrSiO4:Bi3+ phosphors offer more possibilities in the near-UV excited white LED applications.

Automated summary

In this study, ZrSiO4:Bi3+ phosphors were synthesized using the conventional high-temperature solid-phase method, and their structural and optical properties were investigated. The results showed that Bi2O3 played a role in the phase generation, and ZrSiO4:Bi3+ exhibited a broad emission band centered at 548 nm under excitation at 361 nm. The optimized Bi3+ doping concentration was found to be 4 mol%, and the luminescence intensity of ZrSiO4:0.04Bi3+ remained at 84% of the room temperature value at 150 degrees C. These findings suggest that ZrSiO4:Bi3+ phosphors have potential in near-UV excited white LED applications.