Synthesis of a new Cu2MgGeS4 quaternary compound thin film by a low-cost spray method: Structural, Raman and optical properties

In this work, the new Cu2MgGeS4 quaternary compound thin film was synthesized for the first time by spray-ultrasonic of Cu-Mg-Ge precursors onto glass-substrate followed by a sulfurization for 1 h at 500 degrees C. The EDX Mapping shows a uniform desitribution of Cu-Mg-Ge-S with a value near to the ideal stoichiometry of 2:1:1:4 of Cu2MgGeS4. X-ray diffraction displaying typical peaks relating to (1 1 2), (0 0 4), (1 0 5), (2 2 0) and (3 1 2)/(1 1 6) planes of the tetragonal kesterite Cu2MgGeS4 phase (I (4) over bar), the result was confirmed by the presence of all characteristic Raman peak of kesterite structure, especially the predominant peak at (361 cm(-1)). The optical-gap is around 1.80 eV with a high absorption in the visible solar range. These achievements make this new material a potential candidate for solar conversion applications.

Automated summary

This study successfully synthesized the Cu2MgGeS4 quaternary compound thin film and characterized its properties. The results showed that the compound had the ideal stoichiometry, characteristic crystal structure, and good optical properties, indicating its potential for solar conversion applications.