Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition

Rutile germanium oxide (r-GeO2) film has been directly grown heteroepitaxially on c-plane sapphire by pulsed laser deposition. The chemical composition, structural, surface morphology, optical properties, and crystal quality of the film have been systematically investigated. Raman spectroscopy and X-ray diffraction results show that the GeO2 film is the rutile structure with a good (1 00) orientation. The X-ray rocking curve measurement shows that the full width at half maximum of r-GeO2 (200) peak is 24 arc min. Atomic force microscope and transmittance measurements indicate that the transparent r-GeO2 film has a surface roughness of 12.2 nm and a wide bandgap of 5.12 eV. We believed that these results will greatly facilitate the development of wide-bandgap r-GeO2 film for application in electronic devices.

Automated summary

Rutile germanium oxide (r-GeO2) film was successfully grown heteroepitaxially on c-plane sapphire through pulsed laser deposition. The film's chemical composition, structure, surface morphology, optical properties, and crystal quality were comprehensively investigated. The results revealed that the film had a rutile structure with a good orientation, and exhibited transparent properties and a wide bandgap, which are significant for the development of wide-bandgap r-GeO2 films for electronic devices.