Journal
MATERIALS LETTERS
Volume 324, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2022.132762
Keywords
Thinfilms; Amorphousmaterials; Phasetransformation; Sputtering; Crystalstructure
Funding
- National Natural Science Foundation of China [61904118, 22002102]
- Natural Science Foundation of Jiangsu [BK20190935, BK20190947]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJA210005]
- Jiangsu Key Laboratory for Environment Functional Materials
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NSbTe resist can exhibit both positive and negative characteristics by tuning the N concentration. It shows high development selectivity and small linewidths.
We report NSbTe resist with both positive and negative characteristics via tuning N concentration. It is found that N0.9Sb2.3Te acts as a negative resist with the development selectivity of 8.0, while N1.2Sb2.2Te acts as a positive resist with the development selectivity of 6.4. Moreover, the minimum linewidths reach 150 nm in N0.9Sb2.3Te whereas 330 nm in N1.2Sb2.2Te resist. The etching selectivity of Si to N0.9Sb2.3Te reaches 74 while that of Si to N1.2Sb2.2Te is 55. Thus, NSbTe thin film has great potential for both negative and positive lithography.
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