Radio frequency bias enhanced nucleation of CVD diamond

In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates.

Automated summary

A new technique using RF bias for enhanced nucleation of diamond on dielectric and weakly conductive substrates was developed, studying the influence of RF discharge power, methane concentration, and exposure duration on nucleation density. Comparative data of diamond nucleation on silicon and sapphire substrates were presented, showing the potential of achieving high nucleation density on dielectric substrates.