Bi to β-Bi2O3 thin films transformation by thermal oxidation in air at low temperature

Bismuth oxidation by thermal treatment has been studied by several groups, however, low temperature (well below melting) oxidation is rarely reported in the literature. In this work, we focused on the straightforward phase transition from bismuth to the beta-Bi2O3 phase, by gradually heating the bismuth film. This is proved that by carrying out the oxidation process at the low temperature 175 degrees C (as compared to the melting temperature 271 degrees C) it is possible to turn pristine bismuth into beta-Bi2O3. In order to achieve this transformation, the thermal treatment was span for up to 10 h, finding that at 6 h the initially opaque bismuth film becomes optically translucid, meaning that the bismuth oxide beta phase is reaching downwards to the substrate. For 8 and 10 h of thermal treatment the bismuth film is clearly fully oxidized. The bismuth to beta-Bi2O3 transformation was characterized by using Raman micro-spectroscopy, UV-Vis Spectroscopy, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Our results demonstrated a feasible, simple and reliable method for the synthesis of beta-Bi2O3, at well below melting temperature.

Automated summary

This study focuses on the phase transition from bismuth to β-Bi2O3 by gradually heating the bismuth film. The results show that by carrying out the oxidation process at a low temperature, pristine bismuth can be transformed into β-Bi2O3. The transformation was characterized using various techniques, and the method shows feasibility and simplicity for the synthesis of β-Bi2O3.