Improving the Photoresponse of Transistor Memory Using Self-Assembled Nanostructured Block Copolymers as a Photoactive Electret

With the explosive growth in data generation, phototransistor memory capable of multibit data storage with higher stability and switchability is highly desired to enhance the capacity of storage media. An innovative intrinsic dual-functional block copolymer (BCP)-based electret consisting of poly(ethylene oxide)-block-poly(1-pyrenemethyl methacrylate) (PEO-b-PPyMA) was used to elucidate the effect of the BCP design and self-assembled morphology on phototransistor memory. Regarding the constituent polymers in the BCP, PPyMA serves as the photogate, while PEO enhances the charge stability through electrostatic interaction. On the other hand, the solvent-annealed BCP film, representing well-defined hexagonal cylinders, shows an excellent charge trapping/ stabilizing capability. Accordingly, the phototransistor memory, with PEO-b-PPyMA as an electret, produced a wide memory window (54 V), a superior memory stability (> 10(6)), and a fast photoresponsive characteristic. This research presents for the first time a new concept on the intrinsic dual-functional BCP to produce high-performance nonvolatile memory and demonstrates the potential of this approach for prospective application in optoelectronic devices.

Automated summary

With the growing amount of generated data, there is a need for phototransistor memory with higher stability and switchability to enhance storage media capacity. In this study, an innovative dual-functional block copolymer was used as an electret to achieve high-performance phototransistor memory. By optimizing the design and self-assembled morphology, this research demonstrates the potential of the intrinsic dual-functional block copolymer for prospective application in optoelectronic devices.