4.6 Article

Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing

Related references

Note: Only part of the references are listed.
Review Chemistry, Analytical

Selectivity in trace gas sensing: recent developments, challenges, and future perspectives

Puspendu Barik et al.

Summary: Selectivity is a crucial factor in trace gas sensing, but the current research on selectivity is limited. Existing reviews focus on specific types of sensors or technological developments, lacking a comprehensive assessment of selectivity. Solid state sensors, which are flexible, portable, and cost-effective, have been the main focus of research, but their selectivity is low in harsh environments. Therefore, this paper evaluates the limitations and possible solutions to selectivity issues in different gas sensors, and discusses future prospects.

ANALYST (2022)

Article Materials Science, Ceramics

Dual-functional hybrid ZnSnO/Graphene nanocomposites with applications in high-performance UV photodetectors and ozone gas sensors

Chun-Ying Huang et al.

Summary: This study developed a dual-functional sensor using hybrid amorphous ZnSnO (a-ZTO)/graphene nanosheet (GNS) composite films. The sensor exhibited a responsivity of 26.39 A/W at 350 nm, fast response speed with rise time of 0.71 s and decay time of 0.95 s. The ZTO/GNS nanocomposite film showed a gas response of 12.8 against 5-ppm concentration of ozone gas under UV illumination of 10 mW/cm(2), indicating its high sensitivity as both a UV photodetector and a gas sensor.

CERAMICS INTERNATIONAL (2022)

Article Chemistry, Analytical

Indium-gallium-zinc oxide (IGZO) thin-film gas sensors prepared via post-deposition high-pressure annealing for NO2 detection

Sunil Babu Eadi et al.

Summary: In this study, IGZO thin films were prepared in a N-2 environment by varying the annealing pressure and tested for NO2 gas detection. The results showed that increasing the annealing pressure led to superior sensor response and decreased recovery time. The IGZO thin film annealed at 400 degrees C at 3 atm exhibited excellent selectivity to various gases and long-term stability.

SENSORS AND ACTUATORS B-CHEMICAL (2022)

Article Materials Science, Multidisciplinary

Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure

Pei-Te Lin et al.

Summary: This study demonstrates the use of acetylacetone as an additive to control the size of solution-processed a-IGZO nanostructures for ozone gas sensor applications. The addition of acetylacetone improves the gas response, response time, and recovery time of the IGZO sensor. By increasing the number of oxygen vacancies within the IGZO film, acetylacetone enhances the gas adsorption process, resulting in a high-performance gas sensor. The IGZO gas sensor also exhibits excellent long-term stability.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)

Article Engineering, Electrical & Electronic

Radiation hardness of solution-processed amorphous ZnSnO gas sensors against gamma rays

Pei-Te Lin et al.

Summary: Metal oxide semiconductors, such as ZnO and SnO2, are widely used in civil gas sensing applications. However, their performance degrades significantly when exposed to high levels of gamma rays. This study demonstrates that solution-processed amorphous ZnSnO (a-ZTO) thin film has a gamma ray tolerance of 150 kGy, making it suitable for use in harsh environments. The gas sensing response of the sensor increases after gamma irradiation due to the induction of oxygen vacancies. This study shows that a-ZTO thin film can act as a radiation-resistant sensing layer for gas sensors in a space radiation environment.

MICROELECTRONICS RELIABILITY (2022)

Article Engineering, Electrical & Electronic

Dual-Terminal Stimulated Heterosynaptic Plasticity of IGZO Memtransistor with Al2O3/TiO2 Double-Oxide Structure

Heejeong Park et al.

Summary: This study demonstrates the reliable gate-tunable resistive switching characteristics of an IGZO memtransistor and its potential for precise control of heterosynaptic plasticity and multilevel states. It also shows remarkable endurance in long-term potentiation and depression cycling. The high pattern recognition accuracies obtained from artificial neural network simulation further validate its performance.

ACS APPLIED ELECTRONIC MATERIALS (2022)

Article Materials Science, Ceramics

Realization of a self-powered ZnSnO MSM UV photodetector that uses surface state controlled photovoltaic effect

Chun-Ying Huang et al.

Summary: This study demonstrates the fabrication of a self-powered metal-semiconductor-metal (MSM) UV photodetector with a simple planar structure using nontoxic and earth abundant ZnSnO (ZTO). The device operates at zero bias and has a responsivity of 18.2 mA/W at 350 nm, showing fast response speed and good performance under UV illumination.

CERAMICS INTERNATIONAL (2021)

Article Chemistry, Physical

Nanosheet-assembled In2O3 for sensitive and selective ozone detection at low temperature

Ning Sui et al.

Summary: A series of nanosheet-assembled In2O3 materials with different chemisorbed oxygen components were successfully prepared, showing enhanced response by adjusting the amount of chemisorbed oxygen. As an efficient O-3 detector, the sensor exhibited outstanding response to low concentrations of O-3 and a low LOD at a relatively low operating temperature. The O-3 sensing behaviors were interfered by background oxygen, suggesting competitive adsorption between O-3 and O-2 molecules.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Article Optics

High-performance solution-processed flexible Cu2O photodetector via UV-irradiation

Chun-Ying Huang et al.

Summary: This study successfully fabricates a p-type Cu2O flexible photodetector on a PET substrate by UV irradiation, resulting in high-quality Cu2O crystals. The photodetector achieves an extremely high photo-to-dark current ratio, relatively fast photoresponse, and reproducible folding after repeated bending. This solution processing method eliminates the need for high-temperature annealing and is applicable to other solution-processed MOS for flexible electronic applications.

OPTIK (2021)

Article Materials Science, Multidisciplinary

Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

Qian Zhang et al.

Summary: This study demonstrates the feasibility of using lightwave-derived low-temperature annealing to enhance the performance of IGZO TFTs, showing that lightwave annealing can effectively facilitate the decomposition of IGZO precursors and form smooth dense films compared to conventional furnace annealing. The optimal IGZO TFTs exhibit high carrier mobility and a large on-current to off-current ratio when AlOx is used as the dielectric layer, indicating great potential for the fabrication of low-cost wearable devices in the future.

THIN SOLID FILMS (2021)

Article Physics, Applied

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

Pei-Te Lin et al.

Summary: The electrical performance of thin-film transistors using amorphous oxide semiconductor is significantly improved by incorporating metal cations, but the effect of these elements on photodetectors is unknown. This study shows that Li-doped a-ZTO thin-films have decreased oxygen vacancies and achieve an ultra-high photo-to-dark current ratio in UV photodetector applications. Therefore, solution-processed a-ZTO is well-suited for use in UV photodetectors with In-free AOSs.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Article Engineering, Electrical & Electronic

High-performance solution-processed ZnSnO metal-semiconductor-metal ultraviolet photodetectors via ultraviolet/ozone photo-annealing

Chun-Ying Huang et al.

Summary: The study investigates the impact of UV/ozone optical-annealing treatment on ZnSnO (ZTO) metal-semiconductor-metal PDs, achieving a high responsivity of 11.3 A W-1, ultra-high photo-to-dark current ratio of 2090, and improved response speed with a decay time of 3.02 s. The research demonstrates the potential of utilizing UV/O-3 technique for developing In-free AOS for various electronic and optoelectronic devices.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

Article Chemistry, Analytical

Selective ppb-level ozone gas sensor based on hierarchical branch-like In2O3 nanostructure

Ning Sui et al.

Summary: This study successfully achieved high-sensitivity detection of ozone by designing and preparing hierarchical branch-like B-In2O3 nanomaterials. The sensor exhibited fast response and low detection limit of 30 ppb, making it a potential platform for highly sensitive and ppb-level O-3 detection.

SENSORS AND ACTUATORS B-CHEMICAL (2021)

Article Engineering, Electrical & Electronic

Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application

Ki-Lim Han et al.

Summary: In this study, the mechanical durability of island-type a-IGZO thin-film transistors (TFTs) was investigated. The use of TPU reduced the curvature of PI islands, while an organic passivation layer enhanced the stability of the TFT layer against bending and elongation stress. Island TFTs with an organic passivation layer showed minimal changes in electrical properties after repeated bending and stretching tests.

ACS APPLIED ELECTRONIC MATERIALS (2021)

Review Chemistry, Analytical

Recent Developments in Ozone Sensor Technology for Medical Applications

Lisa Petani et al.

MICROMACHINES (2020)

Article Nanoscience & Nanotechnology

High-performance metal-semiconductor-metal ZnSnO UV photodetector via controlling the nanocluster size

Chun-Ying Huang et al.

NANOTECHNOLOGY (2020)

Article Engineering, Electrical & Electronic

Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment

Chun-Ying Huang et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Chemistry, Analytical

Study of a platinum nanoparticle (Pt NP)/amorphous In-Ga-Zn-O (A-IGZO) thin-film-based ammonia gas sensor

Po-Lin Chen et al.

SENSORS AND ACTUATORS B-CHEMICAL (2020)

Article Chemistry, Physical

Low temperature solution-processed IGZO thin-film transistors

Wangying Xu et al.

APPLIED SURFACE SCIENCE (2018)

Article Engineering, Electrical & Electronic

Improved Performance of Amorphous InGaMgO Metal-Semiconductor-Metal Ultraviolet Photodetector by Post Deposition Annealing in Oxygen

Y. Y. Zhang et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2018)

Article Nanoscience & Nanotechnology

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Chia-Man Chou et al.

AIP ADVANCES (2017)

Article Nanoscience & Nanotechnology

Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors

Rawat Jaisutti et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Materials Science, Ceramics

Novel ozone gas sensor based on ZnO nanostructures grown by the microwave-assisted hydrothermal route

L. S. R. Rocha et al.

CERAMICS INTERNATIONAL (2016)

Article Chemistry, Physical

High-response of amorphous ZnSnO sensors for ultraviolet and ethanol detections

Qingjun Jiang et al.

APPLIED SURFACE SCIENCE (2015)

Article Chemistry, Analytical

Highly sensitive amorphous In-Ga-Zn-O films for ppb-level ozonesensing: Effects of deposition temperature

Chiu-Hsien Wu et al.

SENSORS AND ACTUATORS B-CHEMICAL (2015)

Article Materials Science, Ceramics

Preparation of IGZO sputtering target and its applications to thin-film transistor devices

Chun-Chieh Lo et al.

CERAMICS INTERNATIONAL (2012)

Article Chemistry, Analytical

Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor

K Aguir et al.

SENSORS AND ACTUATORS B-CHEMICAL (2002)