Robust Radical Cations of Hexabenzoperylene Exhibiting High Conductivity and Enabling an Organic Nonvolatile Optoelectronic Memory br

Herein, we report robust pi-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene pi-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 +/- 0.04 S cm-1. Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBPH to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 103 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.

Automated summary

In this study, robust pi-conjugated radical cations were obtained from the oxidation of hexabenzoperylene (HBP) derivatives. The radical cation of HBP-B was successfully crystallized and exhibited high conductivity. Additionally, the formation of radical cation in the solid state was observed for HBP-H. This allowed the organic field effect transistor of HBPH to function as a nonvolatile optoelectronic memory with high memory switching contrast and long-term stability.