Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 25, Issue 46, Pages 7208-7214Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201502008
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Funding
- National Research Foundation of Korea (NRL program) [2014R1A2A1A01004815]
- National Research Foundation of Korea (Nano-Material Technology Development program) [2012M3A7B4034985]
- Brain Korea 21 plus Program
- National Research Foundation of Korea [2014R1A2A1A01004815, 21A20131100006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High-performance, air-stable, p-channel WSe2 top-gate field-effect transistors (FETs) using a bilayer gate dielectric composed of high-and low-k dielectrics are reported. Using only a high-k Al2O3 as the top-gate dielectric generally degrades the electrical properties of p-channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high-k oxide forming is deposited. As a result, a top-gate-patterned 2D WSe2 FET is realized. The top-gate p-channel WSe2 FET demonstrates a high hole mobility of 100 cm(2) V-1 s(-1) and a I-ON/I-OFF ratio > 10(7) at low gate voltages (V-GS ca. -4 V) and a drain voltage (V-DS) of -1 V on a glass substrate. Furthermore, the top-gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high-k oxide/low-k organic bilayer dielectric is advantageous over single-layer high-k dielectrics for top-gate p-channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.
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