Effects of growth temperature, oxygen pressure, laser fluence and postannealing on transport properties of superconducting LaAlO3/KTaO3(111) interfaces

The recent discovery of superconductivity at EuO (or LaAlO3)/KTaO3 interfaces has attracted considerable research interest. However, an extensive study on growth of these interfaces is still lacking. In this work, we have fabricated LaAlO3/KTaO3(111) interfaces by growing LaAlO3 thin films on KTaO3(111) single-crystalline substrates by pulsed laser deposition. We investigated the effects of growth temperature, oxygen pressure, laser fluence, and postannealing on transport properties. We found that all these key growth parameters show important effects on transport properties, and discussed their possible mechanisms. Our present study provides useful knowledge to further optimize these interfaces.

Automated summary

The recent discovery of superconductivity at EuO (or LaAlO3)/KTaO3 interfaces has sparked significant research interest. However, there is still a lack of extensive study on the growth of these interfaces. In this work, LaAlO3 thin films were grown on KTaO3(111) single-crystalline substrates via pulsed laser deposition to fabricate LaAlO3/KTaO3(111) interfaces. The effects of growth temperature, oxygen pressure, laser fluence, and postannealing on transport properties were investigated. It was found that these key growth parameters have important effects on transport properties, and their possible mechanisms were discussed. This study provides useful knowledge for further optimization of these interfaces.